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1. Identificação
Tipo de ReferênciaResumo em Evento (Conference Proceedings)
Sitemtc-m16b.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Repositóriosid.inpe.br/mtc-m17@80/2007/07.04.17.35
Repositório de Metadadossid.inpe.br/mtc-m17@80/2007/07.04.17.35.38
Última Atualização dos Metadados2020:12.27.22.04.03 (UTC) administrator
Chave SecundáriaINPE--PRE/
Chave de CitaçãoAndradaeSilvaLaRo:2007:SpDeRe
TítuloSpin dependent refraction of two dimensional electrons in III-V semiconductor structures
Ano2007
Data de Acesso18 maio 2024
Tipo SecundárioPRE CN
2. Contextualização
Autor1 Andrada e Silva, Erasmo Assumpção de
2 La Rocca, G. C.
Grupo1 LAS-INPE-MCT-BR
Afiliação1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Scuola Normale Superiore
Nome do EventoBrazilian Workshop on Semiconductor Physics, 13.
Localização do EventoSão Paulo, SP
Data01-05 Apr.
Título do LivroAbstracts
Tipo TerciárioPoster Session
Histórico (UTC)2007-07-04 17:35:38 :: simone -> administrator ::
2012-10-23 23:56:20 :: administrator -> simone ::
2013-02-20 15:20:01 :: simone -> administrator :: 2007
2020-12-27 22:04:03 :: administrator -> marciana :: 2007
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
ResumoThere has been an increasing e®ort in the study of di®erent mechanisms for controlling the spin polarization of electric charge carriers in semiconductor nanostructures. For non-magnetic and intrinsic structures, the use of electron simple and double spin dependent refraction has been shown to be very promising [1,2]. However, the studies so far have been limited to simple and phenomenological one band models. Starting from Kane's 8-band kp model for the bulk plus the Dresselhaus term in perturbation theory, we have considered realistic special (i.e. with a hetero-interface within the 2D con¯ned system) III-V semiconductor asymmetric quantum wells and have studied the corresponding spin dependent refraction of the 2D conducting electrons at the interface. We concentrate on the e®ects of beam splitting and negative refraction. Analytical expressions have been obtained for the the beam splitting dependence on the model's main parameters, i.e. the band, e®ective-mass and spin- orbit coupling o®sets at the interface. The possibility of negative refraction in such structures, which exists only in the presence of both Rashba and Dresselhaus spin-orbit couplings, is shown to decrease very rapidly with increasing band or e®ective-mass o®set at the interface.
ÁreaFISMAT
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4. Condições de acesso e uso
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Grupo de Usuáriosadministrator
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Visibilidadeshown
5. Fontes relacionadas
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
Acervo Hospedeirolcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notas
Campos Vaziosarchivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination documentstage doi e-mailaddress edition editor electronicmailaddress format identifier isbn issn keywords label lineage mark mirrorrepository nextedition notes numberoffiles numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress readergroup readpermission resumeid rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle size sponsor subject targetfile tertiarymark type url versiontype volume
7. Controle da descrição
e-Mail (login)marciana
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